Pratibha Nishad, A. K. Chatterjee
The punch through breakdown voltage of 3C-SiC Schottky Barrier Diode has been analysed in this paper using Gaussian profile. It is observed that 3C-SiC Schottky barrier diode yield high punch through breakdown voltage with higher values of peak doping concentration and lower values of constant m with increasing depletion region width. So, thinner wafers of 3C-SiC can be used to fabricate Schottky barrier diode to provide higher breakdown voltage using Gaussian profile.
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