Abstrakt

Effects of Ternary Mixed Crystal And Layer Thickness on I-V Output Characteristics of Al₂O₃/AlGaN/GaN MOSHEMTs

Zhou XJ, Xing Y, Gu Z and Meng GQQG*

The threshold voltages and output currents in Al₂O₃/AlGaN/GaN MOSHEMTs are calculated by the charge control model under the total depletion approximation taking into account the fixed charges at the Al₂O₃/AlGaN interface and the polarization in each layer. The results demonstrate that the threshold voltages drift negatively as the Al component in AlGaN and the thickness of each layer rise. It has also been discovered that increasing Al component and Al₂O₃ layer thickness results in a significant increase in current, whereas increasing the AlGaN barrier thickness has only a minor impact. These results imply that the performance of MOSHEMT devices can be improved by the ternary mixed crystal and the size effects.