Abstrakt

Growth and Structural Characterization of DVT Grown SnSeReX(X = 0, 0.1, 0.2, 0.3, 0.4) Crystals

Trupti Patel, GK. Solanki, Vimal S. Joshi

Among the IV-VI semiconductor compounds, Tin sulphide (SnS), Tin selenide (SnSe), Germanium Sulphide (GeS) and Germanium Selenide (GeSe) have the layered orthorhombic structure with eight atoms per unit cell forming biplanar layers normal to the largest c axis [1-4]. In the present work, investigation on growth of single crystals of SnSeRex (x = 0, 0.1, 0.2, 0.3, 0.4) by direct vapour transport technique (DVT) using two zone horizontal furnace is reported. Confirmation of stoichiometric proportion of constituent elements and determination of crystal structure of grown crystals is done by Energy Dispersive Analysis of X-rays (EDAX).The structural behaviour was accomplished by X-Ray diffraction (XRD) studies. As a result, it seen to be orthorhombic structure and results are discussed.